Tunable interdot coupling in few-electron bilayer graphene double quantum dots

We present a highly controllable double quantum dot device based on bilayer graphene. Using architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 to 4 GHz and mutual capacitive 0.2 0.6 meV, independently charge occupation dots. The charging energy hence size remains nearly unchanged. tuning range covers operating regime typical silicon GaAs spin qubit devices.